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研究論文

  • 2018年

2018年 主要学会発表・パブリケーションリスト

※:投稿時点で原則著者全員が当社従業員の学会発表・論文

FPGA-Based CNN Processor with Filter-Wise-Optimized Bit Precision
  • A. Maki, et al.
  • Proceedings of 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC2018) pp.47-50
Non-Volatile Memory for Data Age
  • K. Ishimaru
  • Proceedings of the International Conference on Solid-State and Integrated Technology 2018 (ICSICT-2018) pp. 1215-1218
Formation Mechanism of Sidewall Striation in High-Aspect-Ratio Hole Etching
  • M. Omura, et al.
  • 40th International Symposium on Dry Process (DPS2018), H-2, pp. 293-294
Footprints of RF CMOS Compact Modeling Technology from Wireless Communication to IoT Applications
  • S. Yoshitomi
  • Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018, 8436911, pp. 22-28
Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS
  • H. Seki, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.325-326
High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/um) Off Leakage Current
  • N. Saito, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.573-574
Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application
  • S. Kabuyanagi, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.205-206
Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias
  • D. Zhao, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.805-806 (Late News)
Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~
  • M. Hogyoku, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp. 825-826
Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
  • J. Kataoka, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.1269-1270 (Late News)
Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~
  • K. Ota, et al.
  • 2018 International Conference on Solid State Devices and Materials (SSDM2018) pp.235-236 (Late News)
Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI (Invited)
  • M. Saitoh, et al.
  • 48th European Solid-State Device Research Conference (ESSDERC) 2018, pp.138-141
Performance and Reliability of Ferroelectric HfO2 Tunnel Junction Memory (Invited)
  • S. Fujii, et al.
  • 2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP2018)
Reliability of HfO2-based Ferroelectric Tunnel Junction Memory (Invited)
  • M. Yamaguchi, et al.
  • Non-Volatile Memory Technology Symposium 2018 (NVMTS2018)
A 12.8 Gb/s Daisy Chain-Based Downlink I/F Employing Spectrally Compressed Multi-Band Multiplexing for High-Bandwidth and Large-Capacity Storage Systems
  • Y. Tsubouchi, et al.
  • IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 149-150
Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
  • J. Kataoka, et al.
  • 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421427, pp. 175-177
Origin of High Mobility in InSnZnO MOSFETs
  • N. Saito, et al.
  • 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 8421530, pp. 172-174
3D Flash Memory for Data-Intensive Applications
  • S. Inaba
  • 2018 IEEE 10th International Memory Workshop, IMW 2018 pp. 1-4
Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistor
  • C. Tanaka, et al.
  • IEEE International Conference on Microelectronic Test Structures 2018-March, pp. 23-26
Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching
  • T. Ichikawa, et al.
  • Japanese Journal of Applied Physics 57(6), 06JC01
Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
  • Y. Miyano, et al.
  • Japanese Journal of Applied Physics 57(6), 06JB03
Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor
  • Y. Yoshimura, et al.
  • IEEE International Reliability Physics Symposium Proceedings 2018-March, pp. 5A.61-5A.66
Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
  • H. Kawai, et al.
  • Journal of Applied Physics 123(16), 161425
Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity
  • C. Tanaka, et al.
  • Proceedings - IEEE International Symposium on Circuits and Systems 2018-May, 8350932
Hotspot detection based on surrounding optical feature
  • Y. Abe, et al.
  • Proceedings of SPIE - The International Society for Optical Engineering 10588, 105880I
Updates of nanoimprint lithography for production and applications for next generation memory devices
  • T. Higashiki
  • Proceedings of SPIE - The International Society for Optical Engineering 10584, 105840T
Origin of high mobility in InSnZnO MOSFETs
  • N. Saito, et al.
  • IEEE Journal of the Electron Devices Society 6,8546783, pp. 1258-1262
Fixed charge control of silylated surface for stiction-free drying with surface energy reduction process
  • T. Koide, et al.
  • Solid State Phenomena, 282 SSP, pp. 168-174
3D Flash MemoryにおけるALD技術の応用
  • 相宗 史記
  • 化学工学会 CVD反応分科会主催第28回シンポジウム 「アトミックレイヤープロセッシングの基礎と最新技術動向」, 2018年6月4日
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